Contact Info
2006. B.S., in Chemistry, KAIST, Korea.
2012. Ph.D., in Chemistry, Northwestern University, USA.
2012.03. - 2012.12. Postdoctoral Fellow, Chemistry, Northwestern University, USA.
2013.01. - 2014.02. Postdoctoral Fellow, Chemistry, Stanford University, USA.
2014.03. – Assistant Professor, Department of Chemistry, Chung-Ang University, Korea.
Research Interests
Advanced Electronic Material (Conductor, Semiconductor, Dielectric)  - Transparent Electronic Material  - Flexible and Stretchable Electronic Material  - Functional Electronic Material
Soluble Inorganic Material Precursor Development  - Metal Oxide and Metal Chalcogenide Precursor  - New Precursor System for Group IV, Group III-V, and Metal
Energy Material  - OPV and Hybrid Solar Cell Material  - Thermoelectric Material
Selected Publications
- Delayed Ignition of Autocatalytic Combustion Precursors: Low-Temperature Nanomaterial Binder Approach to Electronically Functional Oxide Films. M.-G. Kim,J. Hennek, H. S. Kim, M. G. Kanatzidis, A. Faccehtti, T. J. Marks, J. Am. Chem. Soc.2012, 134, 11583-11593.
- Exploratory Combustion Synthesis: Amorphous Indium Yttrium Oxide for Thin-Film Transistors. M.-G. Kim,† J. Hennek,† M. G. Kanatzidis, A. Faccehtti, T. J. Marks,   J. Am. Chem. Soc. 2012, 134, 9593-9596. †: equally contributed to this manuscript)
- Low Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing. M.-G. Kim, M. G. Kanatzidis, A. Faccehtti, T. J. Marks, Nature Mater. 2011, 10, 382-388.
- High-Performance Solution-Processed Amorphous Zinc-Indium-Tin-Oxide Thin-Film Transistors. M.-G. Kim, H. S. Kim, Y.-G. Ha, J. He, M. G. Kanatzidis, A. Faccehtti, T. J. Marks J. Am. Chem. Soc. 2010, 132, 10352-10364.